About
The Geballe Laboratory for Advanced Materials (GLAM) is an independent laboratory that supports and fosters interdisciplinary
education and research on advanced materials in science and engineering. GLAM’s educational goals include undergraduate,
graduate and postdoctoral students.
Founded September 1, 1999, the Geballe Laboratory for Advanced Materials (GLAM) is an Independent Laboratory that reports to the Dean of Research. The Laboratory supports the research activities of more than 30 faculty members from the departments of Applied Physics, Chemistry, Electrical Engineering, Materials Science and Engineering, and Physics.
GLAM is located in the McCullough Building on the Stanford main campus, which it shares with its partner in research, the Stanford Institute for Materials & Energy Sciences (SIMES).
Aharon Fest
Join us September 13-15, 2018
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News and Upcoming Events
What does the future of energy look like? Stanford scientists weigh in
Stanford researchers have developed a water-based battery to store solar and wind energy
Double-duty textile developed by Stanford researchers could warm or cool
Stanford researchers develop a gel for growing large quanitities of neural stem cells
Scientists get first close-ups of finger-like growths that trigger battery fires
A Stanford battery based on sodium may offer more cost-effective storage than a lithium
Stanford engineers create smart windows that go from clear to dark in under a minute
Atomic Movies May Help Explain Why Perovskite Solar Cells Are More Efficient
Evidence for a particle that is its own antiparticle
Energy Department awards Stanford $1.5 million for solar research
Nanoscientist Yi Cui named Blavatnik National Laureate
Stanford researchers create a high-performance, low-energy artificial synapse for neural network computing
Stanford-developed nanostraws sample a cell's contents without damage
Stanford researchers say extracting uranium from seawater could help nuclear power play a larger role in a carbon-free energy future
GLAM Special Seminar
tuesday, june 19, 2018 at 3:00 pM, mccullough building, room 335
"Interface Engineering of Boltage-Controlled Embedded Magnetic Random Access Memory"
Xiang (Shaun) Li, University of California, Los Angeles
Condensed Matter Physics Seminar
thursdays AT 3:15 pm in mccullough building, room 115
Will return in the Fall Quarter
